FDMS7572S Datasheet | Fairchild Semiconductor

FDMS7572S N-Channel Power Trench®Sync FET October 2014 N-Channel Power Trench® Sync FETTM 25 V, 49 A, 2.9 mΩ Features - Max r DS(on) = 2.9 mΩ at VGS = 10 V, ID = 23 A - Max r DS(on) = 4.2 mΩ at VGS = 4.5 V, ID = 18 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - Sync FET Schottky Body Diode - MSL1 robust package design - 100% UIL tested - Ro HS pliant General Description The FDMS7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications - Synchronous Rectifier for Synchronous Buck Converters - Notebook - Server - Tele - High Efficiency DC-DC Switch Mode Power Supplies Top Bottom Pin 1 S D5 D6 Power 56 D7 D8 4G 3S 2S 1S MOSFET Maximum...