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FDMS7572S - MOSFET

Description

The FDMS7572S has been designed to minimize losses in power conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Features

  • Max rDS(on) = 2.9 mΩ at VGS = 10 V, ID = 23 A.
  • Max rDS(on) = 4.2 mΩ at VGS = 4.5 V, ID = 18 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • SyncFET Schottky Body Diode.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

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FDMS7572S N-Channel PowerTrench®SyncFET October 2014 FDMS7572S N-Channel PowerTrench® SyncFETTM 25 V, 49 A, 2.9 mΩ Features „ Max rDS(on) = 2.9 mΩ at VGS = 10 V, ID = 23 A „ Max rDS(on) = 4.2 mΩ at VGS = 4.5 V, ID = 18 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description The FDMS7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
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